1/8 www.dynexsemi.com dcr1003sf features double side cooling high surge capability low turn-on losses applications high power converters high voltage power supplies dc motor control voltage ratings ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr1003sf18 note: please use the complete part number when ordering and quote this number in any future correspondance relating to your order. key parameters v drm 1800v i t(av) 1511a i tsm 26250a dvdt* 1000v/ s di/dt 1000a/ s *higher dv/dt selections available dcr1003sf phase control thyristor advance information replaces january 2000 version, ds4548-3.2 ds4645-6.0 july 2001 outline type code: f see package details for further information. fig. 1 package outline dcr1003sf18 dcr1003sf17 DCR1003SF16 dcr1003sf15 dcr1003sf14 conditions t vj = 0? to 125?c, i drm = i rrm = 100ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. type number repetitive peak voltages v drm v rrm v 1800 1700 1600 1500 1400
2/8 www.dynexsemi.com dcr1003sf current ratings t case = 80?c unless stated otherwise. symbol parameter conditions double side cooled i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current single side cooled (anode side) i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current units max. half wave resistive load 1180 a - 1852 a - 1600 a half wave resistive load 830 a - 1300 a - 1050 a current ratings t case = 60?c unless stated otherwise. symbol parameter conditions double side cooled i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current single side cooled (anode side) i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current units max. half wave resistive load 1511 a - 2374 a - 2124 a half wave resistive load 1069 a - 1680 a - 1411 a
3/8 www.dynexsemi.com dcr1003sf surge ratings conditions 10ms half sine; t case = 125 o c v r = 50% v rrm - 1/4 sine 10ms half sine; t case = 125 o c v r = 0 max. units symbol parameter i tsm surge (non-repetitive) on-state current i 2 ti 2 t for fusing i tsm surge (non-repetitive) on-state current i 2 t i 2 t for fusing 3.44 x 10 6 a 2 s 26.25 ka 2.21 x 10 6 a 2 s 21.0 ka thermal and mechanical data dc conditions min. max. units o c/w - 0.038 anode dc clamping force 19.5kn with mounting compound thermal resistance - case to heatsink r th(c-h) 0.004 double side - 125 o c t vj virtual junction temperature t stg storage temperature range reverse (blocking) single side - thermal resistance - junction to case r th(j-c) single side cooled symbol parameter clamping force 18.0 22.0 kn ?5 125 o c - on-state (conducting) - 135 o c - 0.008 o c/w o c/w cathode dc - 0.052 o c/w double side cooled - 0.022 o c/w
4/8 www.dynexsemi.com dcr1003sf dynamic characteristics parameter symbol conditions typ. max. units gate trigger characteristics and ratings v drm = 5v, t case = 25 o c conditions parameter symbol v gt gate trigger voltage v drm = 5v, t case = 25 o c i gt gate trigger current v gd gate non-trigger voltage at 67% v drm t case = 125 o c v fgm peak forward gate voltage anode positive with respect to cathode v fgn peak forward gate voltage anode negative with respect to cathode v rgm peak reverse gate voltage i fgm peak forward gate current anode positive with respect to cathode p gm peak gate power see table, gate characteristics curve p g(av) mean gate power 3.5 v 200 ma 0.25 v 30 v 0.25 v 5v 30 a 150 w 10 w max. units i gd gate non-trigger current at 67% v drm t case = 125 o c -a i rrm /i drm peak reverse and off-state current at v rrm /v drm , t case = 125 o c from 67% v drm to 1000a gate source 1.5a t r = 0.5 s. t j = 125 o c. dv/dt maximum linear rate of rise of off-state voltage to 67% v drm t j = 125 o c. - 100 ma - 1000 v/ s repetitive 50hz - 500 a/ s non-repetitive - 1000 a/ s rate of rise of on-state current di/dt v t(to) threshold voltage at t vj = 125 o c r t on-state slope resistance at t vj = 125 o c t gd delay time 0.86 -v - 0.25 m ? - 1.1 s v d = 67% v drm , gate source 30v, 15 ? rise time 0.5 s, t j = 25 o c i t = 800a, t p = 1ms, t j = 125?c, v rm = 50v, di rr /dt = 20a/ s, v dr = 50% v drm , dv dr /dt = 20v/ s linear s 200 110 turn-off time t q i l latching current t j = 25 o c, v d = 5v i h holding current t j = 25 o c, r g-k = - 350 ma - 230 ma
5/8 www.dynexsemi.com dcr1003sf curves fig.2 maximum (limit) on-state characteristics fig.3 dissipation curves 0.5 1.0 1.5 2.0 2.5 instantaneous on-state voltage, v t - (v) 0 1000 2000 3000 4000 5000 measured under pulse conditions instantaneous on-state current, i t - (a) 1 2 1: t j = 125 ? c min 2: t j = 125 ? c max mean current, i t(av) - (a) power loss - (w) 0 500 1000 1500 2000 2500 3000 0 500 1000 1500 2000 2500 d.c. half wave 3 phase 6 phase v tm equation:- v tm = a + bln (i t ) + c.i t +d. i t where a = 1.191257 b = 0.4149874 c = 3.623888 x 10 4 d = 0.02991257 these values are valid for t j = 125 ? c for i t 500a to 5000a
6/8 www.dynexsemi.com dcr1003sf fig.6 transient thermal impedance - junction to case fig.7 surge (non-repetitive) on-state current vs time (with 50% v rrm at t case = 125?c) 0.1 0.01 0.001 thermal impedance - junction to case - ( ? c/w) 0.001 0.01 0.1 1.0 10 time - (s) anode side cooled double side cooled conduction effective thermal resistance junction to case ? c/w double side 0.022 0.024 0.026 0.027 anode side 0.038 0.040 0.042 0.043 d.c. halfwave 3 phase 120 ? 6 phase 60 ? 40 30 20 10 0 peak half sine wave on-state current - (ka) 11012345 50 ms cycles at 50hz duration 0.5 1.0 i 2 t value - (a 2 s x 10 6 ) i 2 t i 2 t = 2 x t 2 1.5 50 2.0 10 20 30 fig.4 stored charge fig.5 gate characteristics 0.1 1.0 10 100 rate of decay of on-state current, di/dt - (a/s) 10000 1000 100 total stored charge, q s - (c) conditions: q s is total integral stored charge t j = 125 ? c i t = 2000a i t = 1000a max. value i t = 2000a i t = 1000a min. value i rr q s i t di/dt 10 1 0.1 0.01 0.001 gate trigger current, i gt - (a) 100 10 1 0.1 gate trigger voltage, v gt - (v) 100 w 50w 20w 10w 5w region of certain triggering upper limit 95% lower limit 5% t j = 125 ? c t j = 25 ? c t j = -40 ? c v gd 100 200 500 1ms 10ms frequency hz 50 150 150 150 150 20 100 150 150 150 50 - 400 150 125 100 25 - pulse width s table gives pulse power p gm in watts
7/8 www.dynexsemi.com dcr1003sf package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. hole 3.6x2.0 deep (in both electrodes) 48 nom 27.0 25.4 1.5 cathode gate anode 48 nom 76 max nominal weight: 450g clamping force: 19.5kn 10% lead length: 420mm lead terminal connector: m4 ring package outline type code: f cathode tab
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
|
